Plasmaimmersionionimplantationisaversatileprocesstechnologywithwideapplicationsinmicroelectronicsprocessing&materialsengineering.Offers× Simultaneousimplantationofthefullwafer× Ultralowenergy(downto30
> 注入离子能量200KeV或400KeV双电荷注入可达到800KeV三电荷注入可达到1200KeV> IHC离子源> 扩大的注入离子装载能力 可同时配有4个2.2L气罐 可配有4路惰性气路> 注入离子的原子质量可达到218AMU> 同时具备所有IMC的特点
TheIMCseriesaddressesthelackofmodernequipmentfornewtypeofproductionimplantsandadvancedresearch. TheIMCtoolhasbeendesignedtobeeasytouse, easytomaintain,andwithhighreliability.Offers× Upto4activegasli